NTE555 Silicon Pin Diode UHF/VHF Detector
Description: The NTE555 is designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications. Features: D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the "Cat-Whisker" or "S-Bend" Contact D Very Low Capacitance: 1.0pF D Extremely Low Minority Carrier Lifetime: 100ps (Max) D High Reverse Voltage: VR = 50V D Low Reverse Leakage Current: IR = 200nA (Max) Absolute Maximum Ratings: (TJ = +125C, unless otherwise indicated) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Forward Power Dissipation (TA = 25C), PF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Electrical Characteristics: (TA = +25C, unless otherwise indicated)
Parameter Reverse Breakdown Voltage Diode Capacitance Minority Carrier Lifetime Reverse Leakage Current Forward Voltage Case Capactiance Symbol V(BR)R CT r IR VF CC Test Conditions IR = 10A VR = 20V, f = 1MHz IF = 5mA, Krakauer Method VR = 25V IF = 10mA f = 1MHz Min 50 - - - - - Typ - 0.48 15 7 1.0 0.1 Max - 1.0 100 200 1.2 - Unit V pF ps nA V pF
.162 (4.12) Max .027 (0.68) Max Cathode Anode .125 (3.17) Max
.103 (2.6) Max .502 (12.76) Max .061 (1.54) Max .035 (0.88) Max .041 (1.04) Max .085 (2.15) Max .055 (1.4) Max
.170 (4.31) Max
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